Systems and Methods for UV-Based Suppression of Plasma Instability

ABSTRACT

A substrate is positioned in exposure to a plasma generation region within a plasma processing chamber. A first plasma is generated within the plasma generation region. The first plasma is configured to cause deposition of a film on the substrate until the film deposited on the substrate reaches a threshold film thickness. The substrate is then exposed to ultraviolet radiation to resolve defects within the film deposited on the substrate. The ultraviolet radiation can be supplied in-situ using either a second plasma configured to generate ultraviolet radiation or an ultraviolet irradiation device disposed in exposure to the plasma generation region. The ultraviolet radiation can also be supplied ex-situ by moving the substrate to an ultraviolet irradiation device separate from the plasma processing chamber. The substrate can be exposed to the ultraviolet radiation in a repeated manner to resolve defects within the deposited film as the film thickness increases.

BACKGROUND 1. Field of the Invention

The present invention relates to semiconductor device fabrication.

2. Description of the Related Art

Many modern semiconductor chip fabrication processes include generationof a plasma from which ions and/or radical constituents are derived foruse in either directly or indirectly affecting a change on a surface ofa substrate exposed to the plasma. For example, various plasma-basedprocesses can be used to etch material from a substrate surface, depositmaterial onto a substrate surface, or modify a material already presenton a substrate surface. The plasma is often generated by applyingradiofrequency (RF) power to a process gas in a controlled environment,such that the process gas becomes energized and transforms into thedesired plasma. The characteristics of the plasma are affected by manyprocess parameters including, but not limited to, material compositionof the process gas, flow rate of the process gas, geometric features ofthe plasma generation region and surrounding structures, temperatures ofthe process gas and surrounding materials, frequency and magnitude ofthe RF power applied, and bias voltage applied to attract chargedconstituents of the plasma toward the substrate, among others.

However, in some plasma processes, the above-mentioned processparameters may not provide for adequate control of all plasmacharacteristics and behavior. In particular, in some plasma processes,an instability referred to as a “plasmoid” may occur within the plasma,where the plasmoid is characterized by a small area of higher densityplasma surrounded by larger volumes of normal density plasma. Theformation of plasmoids can lead to non-uniformity in the processingresults on the substrate. Therefore, it is of interest to mitigateand/or control plasmoid formation. It is within this context that thepresent invention arises.

SUMMARY

In an example embodiment, a method is disclosed for in-situ treatment offilm surface defects during a plasma-based film deposition process. Themethod includes positioning a substrate in exposure to a plasmageneration region within a plasma processing chamber. The method alsoincludes generating a first plasma within the plasma generation region.The first plasma is configured to cause deposition of a film on thesubstrate. The method also includes generating a second plasma withinthe plasma generation region. The second plasma is configured to emitultraviolet radiation within the plasma generation region. The substrateis exposed to the ultraviolet radiation. The ultraviolet radiationincident upon the substrate induces a reaction on the substrate toresolve defects within the film on the substrate.

In an example embodiment, a method is disclosed for in-situ treatment offilm surface defects during a plasma-based film deposition process. Themethod includes positioning a substrate in exposure to a plasmageneration region within a plasma processing chamber. The method alsoincludes generating a first plasma within the plasma generation region.The first plasma is configured to cause deposition of a film on thesubstrate. The first plasma is generated until the film deposited on thesubstrate reaches a threshold film thickness. The method also includesstopping generation of the first plasma and generating a second plasmawithin the plasma generation region upon the film deposited on thesubstrate reaching the threshold film thickness. The second plasma isconfigured to emit ultraviolet radiation within the plasma generationregion, with the substrate and film deposited on the substrate beingexposed to the ultraviolet radiation. The ultraviolet radiation incidentupon the substrate induces a reaction on the substrate to resolvedefects within the film on the substrate. The method also includes anoperation (a) for stopping generation of the second plasma. The methodthen proceeds with an operation (b) for resuming generation of the firstplasma within the plasma generation region until an interval thicknessof the film deposited on the substrate reaches the threshold filmthickness. The interval thickness of the film corresponds to a thicknessof the film deposited since a most recent stopping of generation of thesecond plasma. Upon the interval thickness of the film deposited on thesubstrate reaching the threshold film thickness, the method proceedswith an operation (c) for stopping generation of the first plasma andresuming generation of the second plasma within the plasma generationregion, with the ultraviolet radiation from the second plasma resolvingdefects within the film on the substrate. The method also includesrepeating operations (a), (b), and (c) in a successive manner until thefilm deposited on the substrate reaches a secured film thickness.

In an example embodiment, a method is disclosed for ex-situ treatment offilm surface defects during a plasma-based film deposition process. Themethod includes positioning a substrate in exposure to a plasmageneration region within a plasma processing chamber. The method alsoincludes generating a plasma within the plasma generation region. Theplasma is configured to cause deposition of a film on the substrate. Theplasma is generated until the film deposited on the substrate reaches athreshold film thickness. The method also includes stopping generationof the plasma and moving the substrate to an ultraviolet irradiationdevice configured to generate ultraviolet radiation upon the filmdeposited on the substrate reaching the threshold film thickness. Themethod includes exposing the substrate and film deposited on thesubstrate to the ultraviolet radiation. The ultraviolet radiationincident upon the substrate induces a reaction on the substrate toresolve defects within the film on the substrate. The method alsoincludes an operation (a) for repositioning the substrate in exposure tothe plasma generation region within the plasma processing chamber. Themethod proceeds with an operation (b) for resuming generation of theplasma within the plasma generation region until an interval thicknessof the film deposited on the substrate reaches the threshold filmthickness. The interval thickness of the film corresponds to a thicknessof the film deposited since a most recent exposure of the substrate toultraviolet radiation within the ultraviolet irradiation device. Uponthe interval thickness of the film deposited on the substrate reachingthe threshold film thickness, the method includes an operation (c) forstopping generation of the plasma and moving the substrate to theultraviolet irradiation device and exposing the substrate and filmdeposited on the substrate to the ultraviolet radiation to resolvedefects within the film on the substrate. The method includes repeatingoperations (a), (b), and (c) in a successive manner until the filmdeposited on the substrate reaches a secured film thickness.

In an example embodiment, a method is disclosed for in-situ treatment offilm surface defects during a plasma-based film deposition process. Themethod includes positioning a substrate in exposure to a plasmageneration region within a plasma processing chamber. The method alsoincludes generating a plasma within the plasma generation region. Theplasma is configured to cause deposition of a film on the substrate. Theplasma is generated until the film deposited on the substrate reaches athreshold film thickness. Upon the film deposited on the substratereaching the threshold film thickness, the method includes stoppinggeneration of the plasma and operating an ultraviolet irradiation devicein exposure to the plasma generation region to transmit ultravioletradiation through the plasma generation region, with the substrate andfilm deposited on the substrate being exposed to the ultravioletradiation. The ultraviolet radiation incident upon the substrate inducesa reaction on the substrate to resolve defects within the film on thesubstrate. The method then proceeds with an operation (a) for stoppingoperation of the ultraviolet irradiation device. The method thenproceeds with an operation (b) for resuming generation of the plasmawithin the plasma generation region until an interval thickness of thefilm deposited on the substrate reaches the threshold film thickness.The interval thickness of the film corresponds to a thickness of thefilm deposited since a most recent stopping of operation of theultraviolet irradiation device. Upon the interval thickness of the filmdeposited on the substrate reaching the threshold film thickness, themethod proceeds with an operation (c) for stopping generation of theplasma and resuming operation of the ultraviolet irradiation device inexposure to the plasma generation region to transmit ultravioletradiation through the plasma generation region to resolve defects withinthe film on the substrate. The method includes repeating operations (a),(b), and (c) in a successive manner until the film deposited on thesubstrate reaches a secured film thickness.

In an example embodiment, an apparatus for in-situ treatment of filmsurface defects during a plasma-based film deposition process isdisclosed. The apparatus includes a substrate support having a topsurface configured to support a substrate during a plasma processingoperation to deposit a film on the substrate. The apparatus alsoincludes an electrode disposed to transmit radiofrequency power into aplasma generation region overlying the substrate support. The apparatusalso includes a process gas delivery component configured to deliver aprocess gas to the plasma generation region. The apparatus also includesan exhaust outlet configured to exhaust gases from the plasma generationregion. The apparatus also includes an ultraviolet irradiation devicedisposed to transmit ultraviolet radiation through the plasma generationregion in a direction toward a top surface of the substrate support.

Other aspects and advantages of the invention will become more apparentfrom the following detailed description, taken in conjunction with theaccompanying drawings, illustrating by way of example the presentinvention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A illustrates a substrate processing system, in accordance withsome embodiments of the present invention.

FIG. 1B illustrates a substrate processing system that is configured toperform an atomic layer deposition (ALD) process on the substrate, inaccordance with some embodiments of the present invention.

FIG. 2 shows a top view of a multi-station processing tool that includesfour processing stations, in accordance with some embodiments of thepresent invention.

FIG. 3 shows a schematic view of an embodiment of the multi-stationprocessing tool interfaced with an inbound load lock and an outboundload lock, in accordance with some embodiments of the present invention.

FIG. 4 shows an example of the pedestal configured to receive thesubstrate for a deposition process, in accordance with some embodimentsof the present invention.

FIG. 5 shows a flowchart of a method for in-situ treatment of filmsurface defects during a plasma-based film deposition process, inaccordance with some embodiments of the present invention.

FIG. 6 shows a flowchart of a method for in-situ treatment of filmsurface defects during a plasma-based film deposition process, inaccordance with some embodiments of the present invention.

FIG. 7 shows a flowchart of a method for ex-situ treatment of filmsurface defects during a plasma-based film deposition process, inaccordance with some embodiments of the present invention.

FIG. 8 shows a flowchart of a method for in-situ treatment of filmsurface defects during a plasma-based film deposition process using anultraviolet irradiation device disposed in exposure to the plasmageneration region within the plasma processing chamber, in accordancewith some embodiments of the present invention.

FIG. 9A shows a substrate processing system in which the method of FIG.8 can be performed, in accordance with some embodiments of the presentinvention.

FIG. 9B shows the substrate processing system of FIG. 9A operating togenerate a plasma within the plasma generation region overlying thesubstrate, in accordance with some embodiments of the present invention.

FIG. 9C shows the substrate processing system of FIG. 9A operating togenerate and transmit ultraviolet radiation from the ultravioletirradiation device through the plasma generation region toward thesubstrate, in accordance with some embodiments of the present invention.

DETAILED DESCRIPTION

In the following description, numerous specific details are set forth inorder to provide a thorough understanding of the present invention. Itwill be apparent, however, to one skilled in the art that the presentinvention may be practiced without some or all of these specificdetails. In other instances, well known process operations have not beendescribed in detail in order not to unnecessarily obscure the presentinvention.

Deposition of films can be implemented in a plasma enhanced chemicalvapor deposition (PECVD) system. The PECVD system may take manydifferent forms. The PECVD system includes one or more chambers or“reactors” (sometimes including multiple stations) that house one ormore substrates and are suitable for substrate processing. Each chambermay house one or more substrates for processing. The one or morechambers maintain the substrate in a defined position or positions (withor without motion within that position, e.g. rotation, vibration, orother agitation). A substrate undergoing deposition may be transferredfrom one station to another within a reactor chamber during the process.Of course, the film deposition may occur entirely at a single station orany fraction of the film may be deposited at any number of stations.While in process, each substrate is held in place by a pedestal,substrate chuck and/or other substrate holding apparatus. For certainoperations, the apparatus may include a heater such as a heating plateto heat the substrate.

In an example embodiment, the term substrate as used herein refers to asemiconductor wafer. Also, in various embodiments, the substrate asreferred to herein may vary in form, shape, and/or size. For example, insome embodiments, the substrate as referred to herein may correspond toa 200 mm (millimeters) semiconductor wafer, a 300 mm semiconductorwafer, or a 450 mm semiconductor wafer. Also, in some embodiments, thesubstrate as referred to herein may correspond to a non-circularsubstrate, such as a rectangular substrate for a flat panel display, orthe like, among other shapes.

FIG. 1A illustrates a substrate processing system 100, which is used toprocess a substrate 101, in accordance with some embodiments of thepresent invention. The system includes a chamber 102 having a lowerchamber portion 102 b and an upper chamber portion 102 a. A centercolumn 141 is configured to support a pedestal 140 formed of anelectrically conductive material. The electrically conductive thepedestal 140 is connected to receive RF signals from an RF power supply104 by way of a match network 106, depending on a setting of an RFdirection control module 250. Also, in the substrate processing system100 of FIG. 1A, a showerhead electrode 150 is configured and connectedto receive RF signals from the RF power supply 104 by way of the matchnetwork 106, depending on the setting of the RF direction control module250. In some embodiments, the RF direction control module 250 isconfigured to direct RF signals transmitted from the RF power supply 104by way of the match network 106 to either the showerhead electrode 150or to the pedestal 140. Also, the RF direction control module 250 isconfigured to electrically connect whichever one of the showerheadelectrode 150 and the pedestal 140 that is not currently receiving RFsignals to a reference ground potential. In this manner, at a giventime, the RF direction control module 250 operates to ensure that eitherthe showerhead electrode 150 will receive RF signals from the RF powersupply 104 while the pedestal 140 is electrically connected to thereference ground potential, or the pedestal 140 will receive RF signalsfrom the RF power supply 104 while the showerhead electrode 150 iselectrically connected to the reference ground potential.

The RF power supply 104 is controlled by a control module 110, e.g., acontroller. The control module 110 is configured to operate thesubstrate processing system 100 by executing process input and controlinstructions/programs 108. The process input and controlinstructions/programs 108 may include process recipes, having directionsfor parameters such as power levels, timing parameters, process gases,mechanical movement of the substrate 101, etc., such as to deposit orform films over the substrate 101.

In various embodiments, the RF power supply 104 can include one or moreRF power sources operating at one or more frequencies. Multiple RFfrequencies can be supplied at the same time to either the showerheadelectrode 150 or the pedestal 140 based on operation of the RF directioncontrol module 250. In some embodiments, frequencies of the RF powersignals are set within a range extending from 1 kHz (kiloHertz) to 100MHz (megaHertz). In some embodiments, frequencies of the RF powersignals are set within a range extending from 400 kHz to 60 MHz. In someembodiments, the RF power supply 104 is set to generate RF signals atfrequencies of 2 MHz, 27 MHz, and 60 MHz. In some embodiments, the RFpower supply 104 is set to generate one or more high frequency RFsignals within a frequency range extending from about 1 MHz to about 60MHz, and generate one or more low frequency RF signals within afrequency range extending from about 100 kHz to about 1 MHz. The RFpower supply 104 can include frequency-based filtering, i.e., high-passfiltering and/or low-pass filtering, to ensure that specified RF signalfrequencies are transmitted. It should be understood that theabove-mentioned RF frequency ranges are provided by way of example. Inpractice, the RF power supply 104 can be configured to generateessentially any RF signal having essentially any frequency as needed.

The match network 106 is configured to match impedances so that the RFsignals generated by the RF power supply 104 can be transmittedeffectively to a plasma load within the chamber 102. Generally speaking,the match network 106 is a network of capacitors and inductors that canbe adjusted to tune impedance encountered by the RF signals in theirtransmission to the plasma load within the chamber 102.

In some embodiments, the center column 141 can include lift pins, whichare controlled by lift pin control 122. The lift pins are used to raisethe substrate 101 from the pedestal 140 to allow an end-effector to pickup the substrate 101, and to lower the substrate 101 after being placedby the end-effector. The substrate processing system 100 furtherincludes a gas supply system 112 that is connected to process gassupplies 114, e.g., gas chemistry supplies from a facility. Depending onthe processing being performed, the control module 110 controls thedelivery of process gases 114 via the gas supply system 112. The chosenprocess gases are then flowed into the showerhead electrode 150 anddistributed in a processing volume defined between the showerheadelectrode 150 and the substrate 101 disposed upon the pedestal 140.

Further, the process gases may be premixed or not. Appropriate valvingand mass flow control mechanisms may be employed within the gas supplysystem 112 to ensure that the correct process gases are delivered duringthe deposition and plasma treatment phases of the process. Process gasesexit the processing volume and flow through an exhaust outlet 143. Avacuum pump (such as a one or two stage mechanical dry pump, among othertypes) draws process gases out of the processing volume and maintains asuitably low pressure within the processing volume by a closed loopfeedback controlled flow restriction device, such as a throttle valve ora pendulum valve.

Also shown is a carrier ring 200 that encircles an outer region of thepedestal 140. The carrier ring 200 is configured to support thesubstrate 101 during transport of the substrate 101 to or from thepedestal 140. The carrier ring 200 is configured to sit over a carrierring support region that is a step down from a substrate support regionin the center of the pedestal 140. The carrier ring 200 has an annularshaped disc structure and includes an outer edge side of its discstructure, e.g., outer radius, and a substrate edge side of its discstructure, e.g., inner radius, that is closest to where the substrate101 sits. The substrate edge side of the carrier ring 200 includes aplurality of contact support structures which are configured to lift thesubstrate 101 when the carrier ring 200 is lifted by spider forks 180.The carrier ring 200 is therefore lifted along with the substrate 101and can be rotated to another station, e.g., in a multi-station system.Carrier ring lift and/or rotate control signals 124 are generated by thecontrol module 110 to control operation of the spider forks 180 to liftand/or rotate the carrier ring 200.

In some embodiments, the electrical insulating layer 507 is disposed ona top surface of the pedestal 140, and an electrically conductive layer509 is disposed on the electrically insulating layer 507. Theelectrically conductive layer 509 is configured to support the substrate101. Also, in these embodiments, the electrically conductive layer canbe electrically connected to a positive terminal of a direct current(DC) power supply 521 by way of a low pass filter 525. The DC powersupply 521 is also connected to be controlled by the control module 110.Therefore, in some embodiments, electrical current can be transmittedfrom the DC power supply 521 through the low pass filter 525 to theelectrically conductive layer 509, in accordance with a prescribedrecipe as provided by the process input and controlinstructions/programs 108 and as executed by the control module 110.

FIG. 1B illustrates a substrate processing system 100A that isconfigured to perform an atomic layer deposition (ALD) process on thesubstrate 101 (e.g. an ALD oxide process), in accordance with someembodiments of the present invention. Similar componentry as describedwith regard to FIG. 1A is shown in FIG. 1 B. Specifically, the substrateprocessing system 100A also includes the upper chamber portion 102 a,the lower chamber portion 102 b, the control module 110, the RF powersupply 104, the match network 106, the electrically conductive layer509, the DC power supply 521, the low pass filter 525, the carrier ring200, and the spider forks 180. In the substrate processing system 100A,a pedestal 140A is configured to include a dielectric body 251. In someembodiments, the dielectric body 251 is affixed directly to the column141. And, in some embodiments, the dielectric body 251 is supported by aconductive structure 252 that is affixed to the column 141. Theelectrically conductive layer 509 is disposed directly upon a topsurface of the dielectric body 251 of the pedestal 140A.

In some embodiments, a heating component 253, such as a resistanceheating element, is disposed with the dielectric body 251 of thepedestal 140A. The heating component 253 is connected to a heater powersupply 255, which is in turn connected to the control module 110. Withthe heating component 253 present, in some embodiments, the heater powersupply 255 can be operated in accordance with a prescribed recipe asprovided by the process input and control instructions/programs 108 andas executed by the control module 110. It should also be understood thattemperature measurement devices can be installed on/within the pedestal140A and/or at other locations around the pedestal 140A to providetemperature measurement data to the control module 110, thereby enablingoperation of a closed-loop temperature feedback control circuit betweenthe control module 110 and the heater power supply 255.

The dielectric body 251 of the pedestal 140A includes an RF electrode254 configured and connected to receive RF signals from the RF powersupply 104 by way of the match network 106, depending on the setting ofan RF direction control module 250. Also, in the substrate processingsystem 100A of FIG. 1B, a showerhead electrode 150A is configured andconnected to receive RF signals from the RF power supply 104 by way ofthe match network 106, depending on the setting of the RF directioncontrol module 250. In some embodiments, the RF direction control module250 is configured to direct RF signals transmitted from the RF powersupply 104 by way of the match network 106 to either the showerheadelectrode 150A or to the RF electrode 254. Also, the RF directioncontrol module 250 is configured to electrically connect whichever oneof the showerhead electrode 150A and the RF electrode 254 that is notcurrently receiving RF signals to a reference ground potential. In thismanner, at a given time, the RF direction control module 250 operates toensure that either the showerhead electrode 150A will receive RF signalsfrom the RF power supply 104 while the RF electrode 154 is electricallyconnected to the reference ground potential, or the RF electrode 154will receive RF signals from the RF power supply 104 while theshowerhead electrode 150A is electrically connected to the referenceground potential.

FIG. 2 shows a top view of a multi-station processing tool 300 thatincludes four processing stations, in accordance with some embodimentsof the present invention. This top view is of the lower chamber portion102 b (e.g., with the top chamber portion 102 a removed forillustration). The four processing stations are accessed by spider forks180. Each spider fork 180, or fork, includes a first and second arm,each of which is positioned around a portion of each side of thepedestal 140/140A. The spider forks 180, using an engagement androtation mechanism 220 are configured to raise up and lift the carrierrings 200 (i.e., from a lower surface of the carrier rings 200) from theprocessing stations in a simultaneous manner, and then rotate a distanceof at least one or more stations before lowering the carrier rings 200(where at least one of the carrier rings supports a substrate 101) sothat further plasma processing, treatment and/or film deposition cantake place on respective substrates 101.

FIG. 3 shows a schematic view of an embodiment of the multi-stationprocessing tool 300 interfaced with an inbound load lock 302 and anoutbound load lock 304, in accordance with some embodiments of thepresent invention. A robot 306, at atmospheric pressure, is configuredto move substrates 101 from a cassette loaded through a pod 308 intoinbound load lock 302 via an atmospheric port 310. Inbound load lock 302is coupled to a vacuum source/pump so that, when atmospheric port 310 isclosed, inbound load lock 302 may be pumped down. Inbound load lock 302also includes a chamber transport port 316 interfaced with processingchamber 102. Thus, when chamber transport 316 is opened, another robot312 may move the substrate from inbound load lock 302 to the pedestal140/140A of a first process station for processing.

The depicted processing chamber 102 comprises four process stations,numbered from 1 to 4 in the example embodiment shown in FIG. 3. In someembodiments, processing chamber 102 may be configured to maintain a lowpressure environment so that substrates may be transferred using thecarrier ring 200 among the process stations 1-4 without experiencing avacuum break and/or air exposure. Each process station 1-4 depicted inFIG. 3 includes a pedestal 140/140A and showerhead electrode 150/150Aand associated process gas supply connections. Also, it should beunderstood that in other embodiments the processing chamber 102 caninclude less than four process stations or more than four processstations.

FIG. 3 also shows the spider forks 180 for transferring substrateswithin the processing chamber 102. As mentioned above, the spider forks180 rotate and enable transfer of substrates from one processing stationto another. The transfer occurs by enabling the spider forks 180 to liftthe carrier rings 200 from an outer undersurface, which lifts thesubstrates 101, and rotates the substrates 101 and carrier rings 200together to the next processing station. In one configuration, thespider forks 180 are made from a ceramic material to withstand highlevels of heat during processing.

FIG. 4 shows an example of the pedestal 140/140A configured to receivethe substrate 101 for a deposition process, such as an atomic layerdeposition (ALD) process, in accordance with some embodiments of thepresent invention. The pedestal 140/140A includes the electricallyconductive layer 509 positioned on a central top surface of the pedestal140/140A, where the central top surface is defined by a circular areaextending from a central axis 420 of the pedestal 140/140A to a topsurface diameter 422 that defines the edge of the central top surface.The electrically conductive layer 509 includes a plurality of substratesupports 404 a, 404 b, 404 c, 404 d, 404 e, and 404 f, which aredistributed across the electrically conductive layer 509 are which areconfigured to support the substrate 101. A substrate support level isdefined by the vertical position of the bottom surface of the substrate101 when seated on the substrate supports 404 a, 404 b, 404 c, 404 d,404 e, and 404 f. In the example of FIG. 4, there are six substratesupports 404 a, 404 b, 404 c, 404 d, 404 e, and 404 f symmetricallydistributed about a periphery of the electrically conductive layer 509.However, in other embodiments there may be any number of substratesupports on the electrically conductive layer 509, and the substratesupports can be distributed across the electrically conductive layer 509in any suitable arrangement for supporting the substrate 101 duringdeposition process operations. FIG. 4 also shows recesses 406 a, 406 b,and 406 c, which are configured to house lift pins. The lift pins can beutilized to raise the substrate 101 from the substrate supports 404 a,404 b, 404 c, 404 d, 404 e, and 404 f to allow for engagement of thesubstrate 101 by an end-effector.

In some embodiments, each substrate support 404 a, 404 b, 404 c, 404 d,404 e, and 404 f defines a minimum contact area structure (MCA). MCA'sare used to improve precision mating between surfaces when highprecision or tolerances are required, and/or minimal physical contact isdesirable to reduce defect risk. Other surfaces in the system can alsoinclude MCA's, such as over the carrier ring 200 supports, and over theinner substrate support region of the carrier ring 200.

The pedestal 140/140A further includes an annular surface 410 extendingfrom the top surface diameter 422 of the pedestal 140/140A to an outerdiameter 424 of the annular surface 410. The annular surface 410 definesan annular region surrounding the electrically conductive layer 509, butat a step down from the electrically conductive layer 509. That is, thevertical position of the annular surface 410 is lower than the verticalposition of the electrically conductive layer 509. A plurality ofcarrier ring supports 412 a, 412 b, and 412 c are positionedsubstantially at/along the edge (outer diameter) of the annular surface410 and are symmetrically distributed about the annular surface 410. Thecarrier ring supports can in some embodiments define MCA's forsupporting the carrier ring 200. In some implementations, the carrierring supports 412 a, 412 b, and 412 c extend beyond the outer diameter424 of the annular surface 410, whereas in other implementations they donot. In some implementations, the top surfaces of the carrier ringsupports 412 a, 412 b, and 412 c have a height that is slightly higherthan that of the annular surface 410, so that when the carrier ring 200is resting on the carrier ring supports 412 a, 412 b, and 412 c, thecarrier ring 200 is supported at a predefined distance above the annularsurface 410. Each carrier ring support 412 a, 412 b, and 412 c mayinclude a recess, such as recess 413 of carrier ring support 412 a, inwhich an extension protruding from the underside of the carrier ring 200is seated when the carrier ring 200 is supported by the carrier ringsupports 412 a, 412 b, and 412 c. The mating of the carrier ringextensions to the recesses (413) in the carrier ring supports 412 a, 412b, and 412 c provides for secure positioning of the carrier ring 200 andprevents the carrier ring 200 from moving when seated on the carrierring supports 412 a, 412 b, and 412 c.

In some implementations, the top surfaces of the carrier ring supports412 a, 412 b, and 412 c are flush with the annular surface 410. In otherimplementations, there are no carrier ring supports separately definedfrom the annular surface 410, so that the carrier ring 200 may restdirectly on the annular surface 410, and such that no gap exists betweenthe carrier ring 200 and the annular surface 410. In suchimplementations, a pathway between the carrier ring 200 and the annularsurface 410 is closed, preventing precursor materials from reaching abackside/underside of the substrate 101 via this pathway.

In the example embodiment of FIG. 4, there are three carrier ringsupports 412 a, 412 b, and 412 c positioned symmetrically along theouter edge region of the annular surface 410. However, in otherimplementations, there may be more than three carrier ring supports,distributed at any locations along the annular surface 410 of thepedestal 140/140A, to support the carrier ring 200 in a stable restingconfiguration.

When the substrate 101 is supported by the substrate supports 404 a, 404b, 404 c, 404 d, 404 e, and 404 f, and when the carrier ring 200 issupported by the carrier ring supports 412 a, 412 b, and 412 c, an edgeregion of the substrate 101 is disposed over an inner portion of thecarrier ring 200. Generally speaking, the edge region of the substrate101 extends from an outer edge of the substrate 101 inward by about 2millimeters (mm) to about 5 mm. A vertical separation is thereby definedbetween the edge region of the substrate 101 and the inner portion ofthe carrier ring 200. In some embodiments, this vertical separation isabout 0.001 inch to about 0.010 inch. The support of the carrier ring200 at the predefined distance above the annular surface 410 and thevertical separation between the edge region of the substrate 101 and theinner portion of the carrier ring 200, can be controlled to limitdeposition on a backside/underside of the substrate 101 in the edgeregion of the substrate 101.

Some plasmas used to deposit thin films or to treat the substratesurface are unstable under conditions that are preferred from a processstandpoint. For example, plasmas generated using an argon-rich processgas composition may be unstable under certain process conditions.However, use of the argon-rich plasma is preferred from a processstandpoint. The argon-rich plasma enables deposition of very highquality films by way of ion bombardment, even at low temperatures (at50° C. for patterning, by way of example). Also, unlikenitrogen-containing plasmas (such as N₂ or N₂O), argon-rich plasmas donot adversely affect the subsequent dry etch rates. As an example, Ar/O₂capacitively-coupled-plasma (CCP) discharge operated within a 1 to 6Torr pressure range and at high RF power (>200 W per 300 mm diametersubstrate processing station) shows instabilities within the plasma. Onesuch plasma instability, referred to herein as a “plasmoid,” ischaracterized by small areas of higher density (brighter) plasmasurrounded by larger volumes of normal density plasma. When plasmoidsare formed, the deposited film is locally densified near the plasmoiddue to interaction of the film with the local high density plasmacorresponding to the plasmoid, which results in degraded filmuniformity. A spatial distribution of plasmoids over the substrate 101can vary from process-to-process, and within a given process. Also, theplasmoids can move across the substrate 101 during a given process. Itshould be understood that the plasmoids cause a degradation in processuniformity across the substrate 101, such as by changing a thickness ofa deposited film at different locations across the substrate 101. Thenon-uniformity in film thickness caused by the plasmoids can be up toabout 5% of the total film thickness, which can be significant in someapplications that require an ultra-flat film profile. For example, filmsdeposited using ALD can require angstrom-level thickness control. Forexample, for a deposited film thickness of 300 angstroms, the filmthickness should be controlled to have a thickness variation of lessthan 2 angstroms over the entire substrate.

During an example film deposition process, an operation is performed toapply a monolayer of a precursor gas, without applying any RF power. Theprecursor gas sticks to the substrate 101. In some embodiments, theprecursor gas includes silicon to enable formation of silicon oxide onthe substrate. An operation is then performed to flush the precursor gasfrom the processing volume over the substrate 101, thereby leaving themonolayer of the precursor gas on the substrate 101. An oxidationprocess is then performed on the substrate 101. In the oxidationprocess, a process gas is flowed into the processing volume over thesubstrate 101 and RF power is applied to the process gas to generate aplasma within the processing volume. The plasma drives oxidationreactions on the substrate 101. In some embodiments, the process gaswill contain oxygen plus one or more other bombardment gases, such asargon, among others, where the bombardment gas(es) provide sufficientdensification of the plasma. The bombardment gas is a gas that iseffective in densifying a deposited film. Bombardment gases that densifythe deposited film are those gases that can effectively transfer energyto the deposited film. In some embodiments, the bombardment gases aremonoatomic noble gases, such as argon, among others, that do not reactchemically with the deposited film and that lack vibrational orrotational molecular modes. For instance, in an example process, theprocess gas mixture can include about 5% to about 20% oxygen with thebalance of the process gas mixture being argon. And, in other exampleprocesses, the percentage of oxygen to the bombardment gas in theprocess gas mixture can be less than 5% or greater than 20%.

During the oxidation process, when a particular thickness of film isformed on the substrate 101, the plasmoids may begin to appear acrossthe substrate 101. The number and size of the plasmoids has a directcorrelation with the amount of the bombardment process gas, e.g., argon,in the process gas mixture. So, reducing of the amount of bombardmentprocess gas in the process gas mixture may serve to reduce the intensityof the plasmoids. However, the higher percentage of bombardment processgas is also typically necessary to provide sufficient plasma density toensure proper film formation and to improve film quality, e.g., betteretch resistance, through bombardment by bombardment process gas ions,e.g., argon ions. Also, a large amount of RF power is needed to generatethe plasma, because if there is not enough RF power applied, the plasmadensity will not be sufficient. However, increasing the applied RF powerleads to formation of more plasmoids. Some process applications useabout 300 W of applied RF power per 300 mm diameter substrate processingstation. However, other process applications may require higher RFpower, such as 400 W, or even higher, per 300 mm diameter substrateprocessing station.

In view of the foregoing, one approach for suppressing plasmoidformation is to reduce the applied RF power and/or increase the oxygenconcentration within the gas mixture. More specifically, lower processpower, i.e., lower applied RF power, or lower bombardment gas (typicallyargon) concentration within the process gas (with respect to oxygen)results in a lower plasma density, thus suppressing formation ofplasmoids. Unfortunately, these conditions are not preferred from adeposited film quality perspective. For example, film quality isdegraded when ion bombardment from the plasma is not sufficient at lowerprocess power or lower bombardment gas concentration within the processgas. Therefore, it may not always be possible to maintain deposited filmquality while suppressing plasmoid formation through lowering of theprocess power and/or lowering of the bombardment gas concentration,e.g., argon concentration, within the process gas.

Plasma-activated ALD silicon oxide (SiO₂) is used across multiple memoryand logic applications in the semiconductor device industry, such asmultiple patterning, hardmasks, electrical liners, through-silicon vias(TSVs), among others. Some plasma-activated ALD SiO₂ processes use anargon-rich O₂/Ar plasma to convert the Si precursor on the substrateinto the desired SiO₂ film. The argon-rich plasma provides fordeposition of very high-quality films even at low temperatures (forexample, at 50° C. in a patterning application) by providing ample ionbombardment. Also, use of argon-rich plasma is not detrimental to thesubsequent dry etch rate of the deposited film, whereas use ofnitrogen-containing plasma (such as N₂ or N₂O) does adversely affect thesubsequent dry etch rate of the deposited film.

High-density argon-rich plasmas are susceptible to instabilities, suchas plasmoids. The plasmoids are local plasma instabilities that arevisually observable and that manifest as film thickness inconsistencies,often characterized as local decreases in film thickness across thesubstrate. As the film is deposited and grows in thickness, theplasmoids initially appear at a critical “threshold film thickness” andpersist until the film reaches a “secured film thickness.” For example,in the case of ALD of SiO₂ film, plasmoids can begin to appear at athreshold film thickness of about 75 angstroms (occurring at about 50ALD cycles) and persist to a secured film thickness of about 180angstroms (occurring at about 120 ALD cycles). Therefore, a significantamount of ALD processing occurs in the presence of the potentiallydamaging plasmoids. It should be understood that the particular valuesof the threshold film thickness and the secured film thickness betweenwhich plasmoids occur can vary based on process parameters and based onthe precursor material used for depositing the film.

Instability in film thickness due to plasma instability causes localdie/device failures which lead to semiconductor device productionscraps. The film deposition process window in which plasma instability,such as plasmoids, can be avoided is considerably reduced, especiallywith respect to parameters of applied power and plasma exposure time.For example, plasmoid signatures begin to appear at a power level ofabout 300 Watts per processing station. High-power is clearly correlatedto plasmoid formation because of the corresponding higher plasmadensity. Placing limitations on power in order to avoid plasmoidformation considerably narrows the available process window for filmdeposition and reduces the extendability of current film depositionprocesses to future technology nodes in which higher power will beneeded to achieve acceptable film quality. Also, simply changing theplasma process gas from the argon-rich composition to an O₂/N₂ or O₂/N₂Ocomposition is not a viable option for mitigating plasmoid formation dueto the improved ion bombardment of the substrate provided by theargon-rich plasma and due to the detrimental effects on subsequent dryetch rate of the film when N is present in the film. Therefore, it is ofinterest to prevent/suppress/mitigate plasma instabilities, such asplasmoids, during film deposition processes (such as ALD and/or PECVD)while maintaining use of the argon-rich plasma process gas.

The plasmoids are sustained by secondary electron emission from thegrowing film thickness, i.e., from the growing dielectric oxide surface.The secondary electron emission is increased by trapped charge defectsand/or oxygen vacancies within the deposited film. The oxygen vacanciescan manifest as a positively charged defects within the deposited film.Therefore, it is of interest to passivate/neutralize/correct the trappedcharge defects and/or oxygen vacancies within the deposited film inorder to reduce secondary electron emission from the film and in turnreduce plasmoid formation.

Systems and methods are disclosed herein to prevent/suppress/mitigateplasma instability, such as the plasmoid, during ALD and PECVD processesby treating and/or exposing the film deposited on the surface of thesubstrate to ultraviolet (UV) radiation. The UV radiation causesreactions that serve to passivate/neutralize/correct the trapped chargedefects and/or oxygen vacancies within the deposited film in order toreduce secondary electron emission from the film and in turn reduceplasmoid formation. For example, UV radiation of tailored energies cangenerate energetic electrons from the bulk material underlying thedeposited film, and these energetic electrons can migrate to the surfaceof the film and passivate oxygen vacancies that are hole-type defects.Also, the UV radiation can induce secondary film correction effects,such as elimination of silanols (Si—OH) to provide more robust Si—O—Sibackbonding of the film. The UV-induced effects can reduce trappedcharge density in the deposited film. The systems and methods disclosedherein for UV treatment of the deposited film are particularly useful inprocesses for ALD of SiO₂ film on the substrate.

UV is a spectral category of electromagnetic radiation having awavelength (X) within a range extending from 100 nanometers (nm) to 400nm. The UV spectrum can be divided into several spectral sub-categoriesincluding vacuum ultraviolet (VUV) (10 nm≦λ<200 nm), extreme ultraviolet(EUV) (10 nm≦λ<121 nm), hydrogen Lyman-alpha (H Lyman-α) (121 nm≦λ<122nm), far ultraviolet (FUV) (122 nm≦λ<200 nm), ultraviolet C (UVC) (100nm≦λ<280 nm), middle ultraviolet (MUV) (200 nm≦λ<300 nm), ultraviolet B(UVB) (280 nm≦λ<315 nm), near ultraviolet (NUV) (300 nm≦λ<400 nm), andultraviolet A (UVA) (315 nm≦λ<400 nm). For ease of description, the term“UV radiation” is used herein to refer to electromagnetic radiationcharacterized by any one or more of the spectral sub-categories of theUV spectrum.

In some embodiments, a film deposited through ALD and/or PECVD isexposed to UV radiation as part of a pre-treatment of the film and/orsmart-treatment of the film during the ALD and/or PECVD process in orderto passivate/correct surface defects in the film and/or reduce trappedcharge density within the film, which in turnprevents/suppresses/mitigates formation of plasma instabilities, e.g.,plasmoids, during continuation of the ALD and/or PECVD process tocomplete formation of the film. The smart-treatment of the film refersto exposure of the film to UV radiation in an in-situ manner and in anas-needed manner in order to passivate/correct surface defects in thefilm as the film is deposited to reach its overall final thickness. Insome embodiments, exposure of the film to the UV radiation can be donein-situ by generating/supplying UV radiation within the ALD and/or PECVDprocessing environment, such as by generating a He plasma that emanatesUV radiation or by operating a UV radiation source installed within theALD and/or PECVD processing environment, by way of example. Also, insome embodiments, exposure of the film to the UV radiation can be doneex-situ by placing the substrate with the partially deposited filmpresent thereon within a separate device configured to expose thesubstrate to the required amount of the UV radiation.

The systems and methods disclosed herein for using UV radiation topassivate/neutralize/correct film surface defects in order toprevent/suppress/mitigate plasma instability, such as the plasmoid,during ALD and/or PECVD processes serve to expand the effective ALDand/or PECVD process window with regard to process gas composition,process gas flow rates, pressure, and/or applied RF power. It should beunderstood that the term “surface” with regard to “surface defects” canbe several molecular layers extending into the “bulk” of the substrateand/or materials present on the surface of the substrate. Also, the term“surface” can refer to a top thickness of material on the substrate asdefined by the mean free path of the electron emission. It should beunderstood that the systems and methods disclosed herein can be usedwith deposition of essentially any type of dielectric film, includingoxides (MxOy) and nitrides (MxNy), where plasma instability can occurdue to film surface defects, oxygen vacancies, and/or trapped chargedefects, and can be used with any type of deposition process, such asALD and PECVD, among others. Additionally, it should be understood thatthe systems and methods disclosed herein can use many differenttechniques for generation of the required UV radiation, and can applythe required UV radiation in either an in-situ manner or ex-situ mannerrelative to the film deposition process.

In some embodiments, generation of the UV radiation for resolving, e.g.,passivating/neutralizing/correcting, of the film surface defects is donein an in-situ manner by generating a He plasma in exposure to thesubstrate during ALD and/or PECVD processing of the substrate. Forexample, in some embodiments, the He plasma is generated in conjunctionwith generation of the Ar/O₂ plasma during deposition of the film on thesubstrate. The He plasma emits high energy UV radiation, which isincident upon the film surface on the substrate. When the UV radiationis incident upon the substrate, energy of the UV radiation is impartedin a photo-initiation process to induce a reaction on the substrate,which serves to resolve the film surface defects on the substrate.

FIG. 5 shows a flowchart of a method for in-situ treatment of filmsurface defects during a plasma-based film deposition process, inaccordance with some embodiments of the present invention. The method ofFIG. 5 can be performed using essentially any type of plasma processingsystem equipped to perform plasma-based film deposition processes, suchas the substrate processing systems 100/100A described with regard toFIGS. 1A, 1B, 2, 3, and 4, by way of example. The method includes anoperation 501 for positioning a substrate in exposure to a plasmageneration region within a plasma processing chamber. The method alsoincludes an operation 503 for generating a first plasma within theplasma generation region. The first plasma is configured to causedeposition of a film on the substrate. In some embodiments, the firstplasma is generated using a process gas composition of argon and oxygen.However, it should be understood that in other embodiments the firstplasma can be generated using a process gas or process gas mixture otherthan argon and oxygen, so long as the first plasma is configured tocause deposition of the desired film on the substrate in an acceptablemanner. In some embodiments, the film deposited on the substrate is asilicon dioxide film. However, it should be understood that in otherembodiments the method of FIG. 5 can be performed using a first plasmaconfigured to deposit a film of essentially any type of material.

The method also includes an operation 505 for generating a second plasmawithin the plasma generation region. The second plasma is configured toemit UV radiation within the plasma generation region, with thesubstrate being exposed to the UV radiation. The UV radiation incidentupon the substrate induces a reaction on the substrate to resolvedefects within the film on the substrate. In some embodiments, the firstplasma and the second plasma are generated simultaneously within theplasma generation region. In some embodiments, the defects within thefilm deposited on the substrate can include oxygen vacancies and/ortrapped charges and/or other anomalies within the film that can lead toplasma instabilities during further plasma-based deposition of the filmon the substrate. In some embodiments, the reaction on the substrateinduced by the UV radiation resolves defects within the film on thesubstrate through one or more processes of passivation and chargeneutralization.

In some embodiments, the second plasma is generated using a process gascomposition of helium. However, it should be understood that in otherembodiments the second plasma can be generated using a process gas orprocess gas mixture other than helium, so long as the second plasmagenerates sufficient UV radiation to resolve defects within thedeposited film, and so long as the second plasma does not adverselyaffect the deposited film and does not adversely affect subsequentprocessing of the deposited film.

In some embodiments, the second plasma is generated within the plasmageneration region after the film deposited on the substrate reaches athreshold film thickness. As previously mentioned, the threshold filmthickness corresponds to a thickness of the deposited film at whichplasma instabilities begin to occur due to defects within the depositedfilm, such as oxygen vacancies and/or trapped charges and/or otheranomalies within the film that can facilitate ejection of secondaryelectrons when the substrate is subjected to bombardment by energeticions from the plasma. The ejected secondary electrons can be acceleratedto high energy when pulled into the bulk plasma through the plasmasheath. And, the accelerated electrons may form regions of high-density,unstable plasma, such as the plasmoids. Such a behavior is observed inargon-rich gas mixtures when discharge interacts with specific surfaces(e.g., film of specific composition and thickness). In some embodiments,the threshold film thickness is within a range extending up to about 75angstroms.

In some embodiments, the UV emanating second plasma is continuouslygenerated within the plasma generation region as the film deposited onthe substrate grows in thickness from the threshold film thickness to asecured film thickness. The secured film thickness corresponds to athickness of the deposited film at which plasma instabilities no longeroccur due to defects within the deposited film. In some embodiments, thesecured film thickness is within a range greater than or equal to about180 angstroms.

In some embodiments, defects within the film deposited on the substrateare resolved by applying UV radiation to the film in a smart-treatmentmanner. For example, in some embodiments, defects within the film aretreated in an in-situ manner by generating a helium plasma in exposureto the substrate such that UV radiation emanating from the helium plasmawill be incident upon the film prior to the film reaching an unresolvedthickness equal to the threshold film thickness, where the unresolvedthickness of the film corresponds to the thickness of the film that hasbeen deposited since the most recent resolution of defects within thefilm through exposure of the film to the UV radiation. Exposure of thedeposited film to the UV radiation in the smart-treatment manner may bedone several times during deposition of the film to reach its totalprescribed thickness on the substrate.

FIG. 6 shows a flowchart of a method for in-situ treatment of filmsurface defects during a plasma-based film deposition process, inaccordance with some embodiments of the present invention. The method ofFIG. 6 can be performed using essentially any type of plasma processingsystem equipped to perform plasma-based film deposition processes, suchas the substrate processing systems 100/100A described with regard toFIGS. 1A, 1B, 2, 3, and 4, by way of example. The method includes anoperation 601 for positioning a substrate in exposure to a plasmageneration region within a plasma processing chamber. The method alsoincludes an operation 603 for generating a first plasma within theplasma generation region. The first plasma is configured to causedeposition of a film on the substrate. In some embodiments, the firstplasma is generated using a process gas composition of argon and oxygen.However, it should be understood that in other embodiments the firstplasma can be generated using a process gas or process gas mixture otherthan argon and oxygen, so long as the first plasma is configured tocause deposition of the desired film on the substrate in an acceptablemanner. In some embodiments, the film deposited on the substrate is asilicon dioxide film. However, it should be understood that in otherembodiments the method of FIG. 6 can be performed using a first plasmaconfigured to deposit a film of essentially any type of material.

The first plasma is generated in the operation 603 until the filmdeposited on the substrate reaches a threshold film thickness. Aspreviously mentioned, the threshold film thickness corresponds to athickness of the deposited film at which plasma instabilities begin tooccur due to defects within the deposited film, such as oxygen vacanciesand/or trapped charges and/or other anomalies within the film. In someembodiments, the threshold film thickness is within a range extending upto about 75 angstroms.

Upon the film deposited on the substrate reaching the threshold filmthickness, the method proceeds with an operation 605 for stoppinggeneration of the first plasma and generating a second plasma within theplasma generation region. The second plasma is configured to emit UVradiation within the plasma generation region, with the substrate andfilm deposited on the substrate being exposed to the UV radiation, wherethe UV radiation incident upon the substrate induces a reaction on thesubstrate to resolve defects within the film on the substrate. In someembodiments, the second plasma is generated using a process gascomposition of helium. However, it should be understood that in otherembodiments the second plasma can be generated using a process gas orprocess gas mixture other than helium, so long as the second plasmagenerates sufficient UV radiation to resolve defects within thedeposited film, and so long as the second plasma does not adverselyaffect the deposited film and does not adversely affect subsequentprocessing of the deposited film.

The method also includes an operation 607 for stopping generation of thesecond plasma. In some embodiments, stopping generation of the secondplasma in operation 607 occurs when the second plasma has beencontinuously generated for a duration within a range extending fromabout 5 seconds to about 60 seconds. However, in other embodiments,generation of the second plasma can be stopped when the second plasmahas been continuously generated for either less than 5 seconds or morethan 60 seconds. The method also includes an operation 609 for resuminggeneration of the first plasma within the plasma generation region untilan interval thickness of the film deposited on the substrate reaches thethreshold film thickness. The interval thickness of the film correspondsto a thickness of the film deposited since a most recent stopping ofgeneration of the second plasma. In other words, the interval thicknessof the film corresponds to a thickness of the film that has beendeposited since the most recent exposure of the film to the UV radiationto resolve defects within the film.

Upon the interval thickness of the film deposited on the substratereaching the threshold film thickness, the method proceeds with anoperation 611 for stopping generation of the first plasma and resuminggeneration of the second plasma within the plasma generation region. Inthe operation 611, the UV radiation from the second plasma again servesto resolve defects within the film on the substrate. The method alsoincludes an operation 613 for repeating operations 607, 609, and 611 ina successive manner until the film deposited on the substrate reaches asecured film thickness. The secured film thickness corresponds to athickness of the deposited film at which plasma instabilities no longeroccur due to defects within the deposited film. In some embodiments, thesecured film thickness is within a range greater than or equal to about180 angstroms. The method can also include an operation for resuminggeneration of the first plasma within the plasma generation region afterthe film deposited on the substrate reaches the secured film thicknessand until the film deposited on the substrate reaches a total prescribedfilm thickness.

In some embodiments, the film deposited on the substrate can be exposedto the UV radiation in an ex-situ manner for resolving of defects withinthe film. In such embodiments, the substrate is transferred from theplasma processing system within which the film is being deposited to aseparate UV irradiation device within which the film is exposed to UVradiation. In some embodiments, the substrate can be transferredback-and-forth between the plasma processing system and the UVirradiation device multiple times as the total prescribed film thicknessis deposited on the substrate.

FIG. 7 shows a flowchart of a method for ex-situ treatment of filmsurface defects during a plasma-based film deposition process, inaccordance with some embodiments of the present invention. The methodincludes an operation 701 for positioning a substrate in exposure to aplasma generation region within a plasma processing chamber. The methodof FIG. 7 can be performed using essentially any type of plasmaprocessing system equipped to perform plasma-based film depositionprocesses, such as the substrate processing systems 100/100A describedwith regard to FIGS. 1A, 1B, 2, 3, and 4, by way of example. The methodalso includes an operation 703 for generating a plasma within the plasmageneration region. The plasma is configured to cause deposition of afilm on the substrate.

In some embodiments, the plasma is generated using a process gascomposition of argon and oxygen. However, it should be understood thatin other embodiments the plasma can be generated using a process gas orprocess gas mixture other than argon and oxygen, so long as the plasmais configured to cause deposition of the desired film on the substratein an acceptable manner. In some embodiments, the film deposited on thesubstrate is a silicon dioxide film. However, it should be understoodthat in other embodiments the method of FIG. 7 can be performed using afirst plasma configured to deposit a film of essentially any type ofmaterial.

The plasma is generated in the operation 703 until the film deposited onthe substrate reaches a threshold film thickness. As previouslymentioned, the threshold film thickness corresponds to a thickness ofthe deposited film at which plasma instabilities begin to occur due todefects within the deposited film, such as oxygen vacancies and/ortrapped charges and/or other anomalies within the film that canfacilitate ejection of secondary electrons from the film material whenthe film is subjected to bombardment by energetic ions from the plasma.In some embodiments, the threshold film thickness is within a rangeextending up to about 75 angstroms.

Upon the film deposited on the substrate reaching the threshold filmthickness, the method proceeds with an operation 705 for stoppinggeneration of the plasma and moving the substrate to a UV irradiationdevice configured to generate UV radiation. In some embodiments, the UVirradiation device is configured separate from the plasma processingchamber in which the plasma-based film deposition process is performed.The operation 705 also includes exposing the substrate and filmdeposited on the substrate to the UV radiation, where the UV radiationincident upon the substrate induces a reaction on the substrate toresolve defects within the film on the substrate.

In some embodiments, the defects within the film deposited on thesubstrate can include oxygen vacancies and/or trapped charges and/orother anomalies within the film that can lead to plasma instabilitiesduring further plasma-based deposition of the film on the substrate. Insome embodiments, the reaction on the substrate induced by the UVradiation resolves defects within the film on the substrate through oneor more processes of passivation and charge neutralization.

The method continues with an operation 707 for repositioning thesubstrate in exposure to the plasma generation region within the plasmaprocessing chamber. The method also includes an operation 709 forresuming generation of the plasma within the plasma generation regionuntil an interval thickness of the film deposited on the substratereaches the threshold film thickness, where the interval thickness ofthe film corresponds to a thickness of the film deposited since a mostrecent exposure of the substrate to UV radiation within the UVirradiation device. In other words, the interval thickness of the filmcorresponds to a thickness of the film that has been deposited since themost recent exposure of the film to the UV radiation to resolve defectswithin the film.

Upon the interval thickness of the film deposited on the substratereaching the threshold film thickness, the method proceeds with anoperation 711 for again stopping generation of the plasma and againmoving the substrate to the UV irradiation device. The operation 711also includes exposing the substrate and film deposited on the substrateto the UV radiation to again resolve defects within the film on thesubstrate. The method includes an operation 713 for repeating operations707, 709, and 711 in a successive manner until the film deposited on thesubstrate reaches a secured film thickness. The secured film thicknesscorresponds to a thickness of the deposited film at which plasmainstabilities no longer occur due to defects within the deposited film.In some embodiments, the secured film thickness is within a rangegreater than or equal to about 180 angstroms.

In some embodiments, the UV irradiation device used in operations 705and 711 is configured to generate a second plasma in exposure to thesubstrate, where the second plasma is configured to emit a sufficientamount of UV radiation to resolve defects present within the filmdeposited on the substrate. In some of these embodiments, the secondplasma is generated using a process gas composition of helium. However,it should be understood that in other embodiments the second plasma canbe generated using a process gas or process gas mixture other thanhelium, so long as the second plasma generates sufficient UV radiationto resolve defects within the deposited film, and so long as the secondplasma does not adversely affect the deposited film and does notadversely affect subsequent processing of the deposited film.

Also, in some embodiments, an electrically powered UV radiation sourceis disposed within the UV irradiation device used in operations 705 and711. In these embodiments, the electrically powered UV radiation sourceis configured to emit a sufficient amount of UV radiation to resolvedefects present within the film deposited on the substrate. For example,in some embodiments, the UV radiation source is an electrically poweredlamp configured to emit photons in the UV spectrum. Also, in someembodiments, the UV irradiation device can include an arrangement oflenses and/or optical fibers for distribution and transmission of the UVradiation from the UV radiation source to the film deposited on thesubstrate.

In some embodiments, defects within the film deposited on the substratecan be resolved by exposing the film to UV radiation in an in-situmanner using a UV irradiation device disposed in exposure to the plasmageneration region within the plasma processing chamber. FIG. 8 shows aflowchart of a method for in-situ treatment of film surface defectsduring a plasma-based film deposition process using a UV irradiationdevice disposed in exposure to the plasma generation region within theplasma processing chamber, in accordance with some embodiments of thepresent invention. The method includes an operation 801 for positioninga substrate in exposure to a plasma generation region within a plasmaprocessing chamber. The method includes an operation 803 for generatinga plasma within the plasma generation region, with the plasma configuredto cause deposition of a film on the substrate. The plasma is generatedin operation 803 until the film deposited on the substrate reaches athreshold film thickness. In some embodiments, the plasma is generatedusing a process gas composition of argon and oxygen. However, it shouldbe understood that in other embodiments the plasma can be generatedusing a process gas or process gas mixture other than argon and oxygen,so long as the plasma is configured to cause deposition of the desiredfilm on the substrate in an acceptable manner. Also, in someembodiments, the film deposited on the substrate is a silicon dioxidefilm. However, it should be understood that in other embodiments themethod of FIG. 8 can be performed using a plasma configured to deposit afilm of essentially any type of material.

As previously mentioned, the threshold film thickness corresponds to athickness of the deposited film at which plasma instabilities begin tooccur due to defects within the deposited film, such as oxygen vacanciesand/or trapped charges and/or other anomalies within the film that canfacilitate ejection of secondary electrons from the film material whenthe film is subjected to bombardment by energetic ions from the plasma.In some embodiments, the threshold film thickness is within a rangeextending up to about 75 angstroms.

Upon the film deposited on the substrate reaching the threshold filmthickness, the method proceeds with an operation 805 for stoppinggeneration of the plasma and operating the UV irradiation device inexposure to the plasma generation region to transmit UV radiationthrough the plasma generation region, with the substrate and filmdeposited on the substrate being exposed to the UV radiation, where theUV radiation incident upon the substrate induces a reaction on thesubstrate to resolve defects within the film on the substrate. In someembodiments, the defects within the film deposited on the substrate caninclude oxygen vacancies and/or trapped charges and/or other anomalieswithin the film that can lead to plasma instabilities during furtherplasma-based deposition of the film on the substrate. In someembodiments, the reaction on the substrate induced by the UV radiationresolves defects within the film on the substrate through one or moreprocesses of passivation and charge neutralization.

In some embodiments, the UV irradiation device includes an electricallypowered UV radiation source. In these embodiments, the electricallypowered UV radiation source is configured to emit a sufficient amount ofUV radiation to resolve defects present within the film deposited on thesubstrate. For example, in some embodiments, the UV radiation source isan electrically powered lamp configured to emit photons in the UVspectrum. Also, in some embodiments, the UV irradiation device caninclude an arrangement of lenses and/or optical fibers for distributionand transmission of the UV radiation from the UV radiation source to thefilm deposited on the substrate. Also, it should be understood that indifferent embodiments the UV irradiation device and its operation canhave variations in photon energy and/or lamp configuration and/orambient conditions.

The method also includes an operation 807 for stopping operation of theUV irradiation device after the defects within the film have beensufficiently resolved. The method continues with an operation 809 forresuming generation of the plasma within the plasma generation regionuntil an interval thickness of the film deposited on the substratereaches the threshold film thickness, where the interval thickness ofthe film corresponds to a thickness of the film deposited since a mostrecent stopping of operation of the UV irradiation device. In otherwords, the interval thickness of the film corresponds to a thickness ofthe film that has been deposited since the most recent exposure of thefilm to the UV radiation to resolve defects within the film.

Upon the interval thickness of the film deposited on the substratereaching the threshold film thickness, the method proceeds with anoperation 811 for stopping generation of the plasma and resumingoperation of the UV irradiation device in exposure to the plasmageneration region to transmit UV radiation through the plasma generationregion to resolve defects within the film on the substrate. The methodalso includes an operation 813 for repeating operations 807, 809, and811 in a successive manner until the film deposited on the substratereaches a secured film thickness. The secured film thickness correspondsto a thickness of the deposited film at which plasma instabilities nolonger occur due to defects within the deposited film. In someembodiments, the secured film thickness is within a range greater thanor equal to about 180 angstroms.

FIG. 9A shows a substrate processing system 100C in which the method ofFIG. 8 can be performed, in accordance with some embodiments of thepresent invention. The substrate processing system 100C is a variationof the substrate processing system 100A of FIG. 1B. The substrateprocessing system 100C is an example of an apparatus for in-situtreatment of film surface defects during a plasma-based film depositionprocess. The substrate processing system 100C includes a substratesupport, e.g., the pedestal 140A, having a top surface configured tosupport the substrate 101 during a plasma processing operation todeposit a film on the substrate 101. The substrate processing system100C also includes an electrode, e.g., the showerhead electrode 150Aand/or the RF electrode 254, disposed to transmit radiofrequency powerinto a plasma generation region overlying the substrate support. Thesubstrate processing system 100C also includes a process gas deliverycomponent, i.e., the showerhead electrode 150A, configured to deliver aprocess gas to the plasma generation region. The substrate processingsystem 100C also includes the exhaust outlet 143 configured to exhaustgases from the plasma generation region.

Additionally, the substrate processing system 100C includes a UVirradiation device 901 disposed to transmit UV radiation through theplasma generation region in a direction toward a top surface of thesubstrate support. Also, in the substrate processing system 100C, thecontrol module 110 serves as a control system configured to directgeneration of the plasma within the plasma generation region and directoperation of the UV irradiation device 901, such that generation of theplasma within the plasma generation region and transmission of UVradiation through the plasma generation region are performed in asuccessive manner without moving the substrate 101 from the top surfaceof the substrate support. In some embodiments, control signals aretransmitted from the control module 110 to the UV irradiation device 901through a signal conductor 903. In some embodiments, the control module100 is configured to operate the substrate processing system 100C byexecuting process input and control instructions/programs 108 that aredefined to direct generation of the plasma within the plasma generationregion and transmission of UV radiation through the plasma generationregion in a successive manner without moving the substrate 101 from thetop surface of the substrate support.

FIG. 9B shows the substrate processing system 100C of FIG. 9A operatingin accordance with operations 803 and 809 of the method of FIG. 8 togenerate a plasma 905 within the plasma generation region overlying thesubstrate 101, in accordance with some embodiments of the presentinvention. FIG. 9C shows the substrate processing system 100C of FIG. 9Aoperating in accordance with operations 805 and 811 of the method ofFIG. 8 to generate and transmit UV radiation from the UV irradiationdevice 901 through the plasma generation region toward the substrate101, as indicated by the collection of arrows 907, in accordance withsome embodiments of the present invention. It should be understood thatthe UV irradiation device 901 can include an arrangement of lensesand/or optical fibers for distribution and transmission of the UVradiation to the film deposited on the substrate 101. Also, it should beunderstood that in different embodiments the UV irradiation device 901and its operation can have variations in photon energy and/or lampconfiguration and/or ambient conditions. It should be appreciated thatthe systems and methods disclosed herein for suppressing plasmainstabilities by using UV radiation to resolve defects within thedeposited film adds a minimum perturbation to the plasma processingsystem.

The systems and methods disclosed herein provide an innovative UVradiation post treatment of conformal dielectric films in order topassivate/neutralize/correct oxygen vacancies and/or trapped chargeswithin the deposited film so as to reduce secondary electron emissionfrom the deposited film and correspondingly reduce formation of plasmainstabilities, e.g., plasmoids. The systems and methods disclosed hereinalso provide for extension of the film deposition process window tohigher power regimes, while maintaining use of argon-rich plasma and itsassociated beneficial argon ion bombardment, thereby leading to superiorquality film deposition for future technology nodes.

The foregoing description of the embodiments has been provided forpurposes of illustration and description. It is not intended to beexhaustive or to limit the invention. Individual elements or features ofa particular embodiment are generally not limited to that particularembodiment, but, where applicable, are interchangeable and can be usedin a selected embodiment, even if not specifically shown or described.The same may also be varied in many ways. Such variations are not to beregarded as a departure from the invention, and all such modificationsare intended to be included within the scope of the invention.

Although the foregoing invention has been described in some detail forpurposes of clarity of understanding, it will be apparent that certainchanges and modifications can be practiced within the scope of theappended claims. Accordingly, the present embodiments are to beconsidered as illustrative and not restrictive, and the invention is notto be limited to the details given herein, but may be modified withinthe scope and equivalents of the described embodiments.

What is claimed is:
 1. A method for in-situ treatment of film surfacedefects during a plasma-based film deposition process, comprising:positioning a substrate in exposure to a plasma generation region withina plasma processing chamber; generating a first plasma within the plasmageneration region, the first plasma configured to cause deposition of afilm on the substrate; and generating a second plasma within the plasmageneration region, the second plasma configured to emit ultravioletradiation within the plasma generation region, wherein the substrate isexposed to the ultraviolet radiation, and wherein the ultravioletradiation incident upon the substrate induces a reaction on thesubstrate to resolve defects within the film on the substrate.
 2. Themethod as recited in claim 1, wherein the first plasma and the secondplasma are generated simultaneously within the plasma generation region.3. The method as recited in claim 1, wherein the second plasma isgenerated within the plasma generation region after the film depositedon the substrate reaches a threshold film thickness.
 4. The method asrecited in claim 3, wherein the second plasma is continuously generatedwithin the plasma generation region as the film deposited on thesubstrate grows in thickness from the threshold film thickness to asecured film thickness.
 5. The method as recited in claim 4, wherein thethreshold film thickness is within a range extending up to about 75angstroms, and wherein the secured film thickness is within a rangegreater than or equal to about 180 angstroms.
 6. The method as recitedin claim 1, wherein the first plasma is generated using a process gascomposition of argon and oxygen, and wherein the second plasma isgenerated using a process gas of helium.
 7. The method as recited inclaim 6, wherein the film deposited on the substrate is a silicondioxide film.
 8. The method as recited in claim 1, wherein the defectswithin the film on the substrate include oxygen vacancies and/or trappedcharges.
 9. The method as recited in claim 1, wherein the reaction onthe substrate induced by the ultraviolet radiation resolves defectswithin the film on the substrate through one or more processes ofpassivation and charge neutralization.
 10. The method as recited inclaim 1, wherein the first plasma is generated until the film depositedon the substrate reaches a threshold film thickness, wherein upon thefilm deposited on the substrate reaching the threshold film thickness,stopping generation of the first plasma and generating the second plasmawithin the plasma generation region, the method further including a)stopping generation of the second plasma, b) resuming generation of thefirst plasma within the plasma generation region until an intervalthickness of the film deposited on the substrate reaches the thresholdfilm thickness, wherein the interval thickness of the film correspondsto a thickness of the film deposited since a most recent stopping ofgeneration of the second plasma, c) upon the interval thickness of thefilm deposited on the substrate reaching the threshold film thickness,stopping generation of the first plasma and resuming generation of thesecond plasma within the plasma generation region with the ultravioletradiation from the second plasma resolving defects within the film onthe substrate, d) repeating operations a), b), and c) in a successivemanner until the film deposited on the substrate reaches a secured filmthickness.
 11. The method as recited in claim 10, further comprising:resuming generation of the first plasma within the plasma generationregion after the film deposited on the substrate reaches the securedfilm thickness and until the film deposited on the substrate reaches atotal prescribed film thickness.
 12. The method as recited in claim 10,wherein the first plasma is generated using a process gas composition ofargon and oxygen, and wherein the second plasma is generated using aprocess gas of helium.
 13. The method as recited in claim 12, whereinthe threshold film thickness is within a range extending up to about 75angstroms, and wherein the secured film thickness is within a rangegreater than or equal to about 180 angstroms.
 14. The method as recitedin claim 13, wherein the film deposited on the substrate is a silicondioxide film.
 15. The method as recited in claim 10, wherein the defectswithin the film on the substrate include oxygen vacancies and/or trappedcharges.
 16. The method as recited in claim 10, wherein stoppinggeneration of the second plasma in operation a) occurs when the secondplasma has been continuously generated for a duration within a rangeextending from about 5 seconds to about 60 seconds. 17-22. (canceled)